Simulation for Atomic Layer Deposition system

Dear all,

I used to simulate EM or optical problems by using RF module.
It is my first time to use chemical reaction and CFD module.
I would need your help to guide me to simulate my model.

The model is to simulate the thin film growth thickness in an atomic layer
deposition (ALD) system.
There are several useful models in the gallery, such as "Chemical Vapor
Deposition of GaAs", "Molecular Flow in an ion-implant vaccum system".

But there are two problems I can imaginate now.
1) For CVD, it is a continue reaction process. All chemical reactants are
mixed togather in the same time. But for ALD, the chemical reactants flow
in to the system one after another. Then, adsorbe and form the thin film
layer by layer. Could I still modify the CVD model to simulate ALD process?
or I need to conside two independent process.
2) For ALD, the reaction is highly sensitive to the reactant gas
distrubution and surface temperture distrubution. Current CVD of GaAs model
assumes a uniform gas flow. I know I might need to combine the CFD or
molecular flow module with chemical reaction engineering module (even with
heat transfer module). Is there any model tutorial that I can learn?

If there is any hints, that will be great for me. Thank you very much.

Best Regards,
-Tom